Semiconductor laser
文献类型：专利
| 作者 | NISHI KENICHI |
| 发表日期 | 1986-02-12 |
| 专利号 | JP1986030090A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a coherant output having stable spatical mode to be readily obtained, by providing a stripe region so as to intersect a plurality of stripe- shaped oscillation regions, the region having a refractive index which is substantially equal to that of the oscillation regions. CONSTITUTION:On the same plane as a plurality of strip-shaped oscillation regions 11, a region having a refractive index which is substantially equal to that of the oscillation regions 11 is formed so as to intersect them. In an index waveguide area 13 in this structure, the light is propagated in a mode which is determined by the difference between the refractive index of the regions 11 and that of the regions around them. In the region 12, however, light is spread by diffraction since there is no difference between the refractive index of the regions 11 and that of the outside thereof. The provision of the region 12 enables optical coupling between the regions 11 to be effected at the region 12 highly efficiently. The light rays which are optically coupled at the region 12 are guided by the other portions of the regions 13 in the same manner as that in ordinary index waveguide type lasers. Accordingly, it is possible to obtain output light from the end face of the laser in a stable spatial mode. In addition, the laser does not involve unstableness due to the changes in the spatial mode. |
| 公开日期 | 1986-02-12 |
| 申请日期 | 1984-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78766]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NISHI KENICHI. Semiconductor laser. JP1986030090A. 1986-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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