半導体発光装置
文献类型：专利
| 作者 | 塚田 俊久; 福沢 董 |
| 发表日期 | 1995-11-15 |
| 专利号 | JP1995107945B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光装置 |
| 英文摘要 | PURPOSE:To simplify the manufacture by a method wherein excited current is flowed from an electrode, composed of an active region forming an MQW layer and the MQW layer disordered by diffusion, which is offset in the active region. CONSTITUTION:An N-type Ga0.6Al0.4As layer 14, an MQW active layer 4, an N-type Ga0.6Al0.4As layer 14, a P-type Ga0.6Al0.4As layer 15, and an undoped GaAs layer 16 are successively grown on an N-type GaAs substrate 12. The MQW active layer is 5-period lamination structure of GaAs and Ga0.7Al0.3As layers. An Si3N4 insulation film is deposited after growth and processed into a stripe, and Zn diffusion is carried out by using the mask of this piece. This process yields a diffused layer reaching the layer 13. Next, the Si3N4 layer is removed; then, an electrode 11 to a P-type GaAs contact layer 17 is formed out of Cr-Au, and a contact to the substrate 12 out of Au-Ge-Ni. This is cleft and bonded to a Cu heat sink. This system enables lateral mode control by oscillation on low current and can produce lasers easy of arraying by a simple process. |
| 公开日期 | 1995-11-15 |
| 申请日期 | 1985-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78767]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 塚田 俊久,福沢 董. 半導体発光装置. JP1995107945B2. 1995-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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