Manufacture of semiconductor laser
文献类型：专利
| 作者 | YOSHITOSHI KEIICHI; YONEDA KOJI |
| 发表日期 | 1988-12-08 |
| 专利号 | JP1988301581A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate forming a high output type semiconductor laser chip and a low noise and low output type semiconductor laser on one main surface of a substrate in a monolithic structure by a method wherein 1st and 2nd deep trenches and 1st and 2nd shallow trenches extended along the 1st deep trench are formed and a double-hetero junction is formed by liquid phase epitaxy. CONSTITUTION:A high resistance current construction layer 2 is formed on one main surface of a substrate Then, 1st and 2nd deep trenches 3 and 4 which are as deep as reaching the substrate 1 and are extended in parallel to each other and 1st and 2nd shallow trenches 5 and 6 which are not so deep as to reach the substrate 1 and are extended along and on both sides of the 1st deep trench 3 are formed in the surface of the current construction layer 2. Further, a double-hetero junction is formed on the current constriction layer 2 by liquid phase epitaxy. With this constitution, a high output type semiconductor laser chip and a low output type semiconductor laser chip can be formed simultaneously on one main surface of the substrate |
| 公开日期 | 1988-12-08 |
| 申请日期 | 1987-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78769]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | YOSHITOSHI KEIICHI,YONEDA KOJI. Manufacture of semiconductor laser. JP1988301581A. 1988-12-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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