Method for driving semiconductor laser
文献类型：专利
| 作者 | TAKIGUCHI HARUHISA; KANEIWA SHINJI; YOSHIDA TOMOHIKO; KUDO HIROAKI |
| 发表日期 | 1988-08-04 |
| 专利号 | JP1988188985A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for driving semiconductor laser |
| 英文摘要 | PURPOSE:To operate on large amounts of output and also prevent small amounts of output from generating noises by controlling an electric current that is caused to flow in a control region formed at a part of a waveguide where a diffraction grating is mounted so that it will be provided with an optimum condition according to its output operation. CONSTITUTION:A fig. A shows a plan view and the fig. B exhibits a section view cut by X-X' line and the fig. C is the section view cut by Y-Y' line. An optical waveguide is formed in response to an active layer 8 right above a current passage which is opened by a V-shaped groove that is penetrating an electric blocking layer 6 and right above the waveguide, a principal region 1 at the rear side of laser output is separated from a control region 2 at the front side by a shallow groove 3 that is penetrating an N-side electrode 12. The deep groove 4 reaching the current blocking layer 6 after penetrating the active layer 8 from the N-side electrode 12 in combination with the shallow groove 3 is formed in the form of L-shape and the principal and control regions 1 and 2 are nearly divided into two parts. As an operation of semiconductor laser on small amounts of output is carried out to increase optical absorption by lowering an injected current of the control region 2 situated at the signal output side, a return light is absorbed by the control region 2 as well and then generating of a noise induced due to the return light is extremely suppressed. |
| 公开日期 | 1988-08-04 |
| 申请日期 | 1987-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78776]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | TAKIGUCHI HARUHISA,KANEIWA SHINJI,YOSHIDA TOMOHIKO,et al. Method for driving semiconductor laser. JP1988188985A. 1988-08-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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