Semiconductor laser device
文献类型：专利
| 作者 | KAWADA SEIJI |
| 发表日期 | 1991-11-15 |
| 专利号 | JP1991256387A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To manufacture an AlGaInP-based semiconductor laser, whose astigmatism is small and which is oscilatted in a single transverse mode, in a self- aligned manner by a method wherein a GaAs layer having a thickness which makes a quantum level larger than the energy gap of an active layer is formed in parts other than the surface of a mesa structure of a p-clad layer of a specific structure and a p-type layer of a specific structure is formed on the whole surface of it. CONSTITUTION:A double heterostructure composed of the following is formed on an n-type GaAs substrate 1: an active layer 3 composed of GaInP or AlGaInP or a quantum well layer of them; and clad layers 2, 4 which sandwich the active layer 3, whose refractive index is smaller than that of the active layer 3 and which is composed of AlGaInP. The p-type (AlXGa1-X)0.5In0.5 clad layer 4 at the upper part of the active layer 3 has a stripe-shaped mesa structure formed by making its layer thickness partially thick. A GaAs layer 5 having a thickness which makes a quantum level larger than the energy gap of the active layer 3 is formed in parts other than the surface of the mesa structure. A p-type (AlYGa1-Y)0.5In0.5P (where Y>X) layer 6 is formed on the whole surface of the structures. |
| 公开日期 | 1991-11-15 |
| 申请日期 | 1990-03-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78792]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KAWADA SEIJI. Semiconductor laser device. JP1991256387A. 1991-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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