Liquid growth method
文献类型：专利
| 作者 | USHIJIMA ICHIRO |
| 发表日期 | 1987-04-27 |
| 专利号 | JP1987092431A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid growth method |
| 英文摘要 | PURPOSE:To prevent a reactive current passage from occurring and improve yield of forming crystal structure, by forming p-InP and n-InP crystal layers in succession on an n-InP substrate during the first LPE growth and making a supersaturated degree of solution, by which a n-InP clad layer is formed below an active layer during the second LPE growth, below 5 deg.C. CONSTITUTION:In case that a reactive current passage occurs, a curvature (an inverse number of a curvature radius) of a clad-layer surface below an active layer tends to becomes larger than in the case that it does not occur. If the curvature of the clad-layer surface is made to become small, the reactive current passage can be prevented from occurring. Therefore, an n-InP layer is put on a P-InP layer during the first growth, and a supersaturated degree of solution in the clad layer below the active layer is made below 5 deg.C during the second growth. Hence, the reactive current passage can be prevented from occurring inside a groove. And, leakage current can be prevented from occurring in a flat part, because the n-InP layer is formed in advance by the first growth even if the n-InP layer of the second growth is not formed. |
| 公开日期 | 1987-04-27 |
| 申请日期 | 1985-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78793]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | USHIJIMA ICHIRO. Liquid growth method. JP1987092431A. 1987-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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