Semiconductor laser
文献类型：专利
| 作者 | TAMURA HIDEO; YAMAMOTO MOTOYUKI |
| 发表日期 | 1991-05-15 |
| 专利号 | JP1991114283A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve irregularity in the characteristics of a semiconductor laser and to improve the reliability and the productivity of the laser by a method wherein the main parts of the laser are formed by the crystal growth processes of LPE(liquid phase epitaxy) and MOCVD(metal organic chemical vapor deposition) and an etching process for deciding a stripe width. CONSTITUTION:An n-type GaAs current stopping layer 2 having a striped groove 5 to reach a p-type GaAs substrate 1 is provided between a first main surface 3 to come into contact to the substrate 1 and a second main surface 4 on the side opposite to the surface 3. A p-type GaAlAs clad layer 7 which is formed by an LPE method is deposited in the interior of the groove 5 and the interior is completely filled until the upper surface of this layer 7 is formed in a row to the surface 4. That is, a flat surface X-X', which opposes to the surface 3 and has no roughness, of the layer 2 is formed by the layer 7. A p-type InGaAlP clad layer 9, an InGa active layer 11, an n-type InGaAlP clad layer 13 and an n-type GaAs ohmic layer 15 are provided on this flat surface X-X' in the order of these layers 9, 11, 13 and 15 by an MOCVD method. The case where the layer 11 is an In1-y(Ga1-xAlx)yP active layer is the case of x=0, yapprox.=0.5. |
| 公开日期 | 1991-05-15 |
| 申请日期 | 1989-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78800]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | TAMURA HIDEO,YAMAMOTO MOTOYUKI. Semiconductor laser. JP1991114283A. 1991-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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