中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者KOJIMA, KEISUKE; KYUMA, KAZUO; NODA, SUSUMU; KAMEYA, MASAAKI; OHTA, JUN; HAMMANAKA, KOICHI
发表日期1989-12-19
专利号US4888783
著作权人MITSUBISHI DENKI KABUSHIKI KAISHA
国家美国
文献子类授权发明
其他题名Semiconductor laser device
英文摘要In a light-responsive semiconductor device in which the laser oscillation state is controlled by incident light, a layer of material having a conductivity modulatable by light is integrated in a semiconductor laser structure and is responsive to the incident light for the control of the laser oscillation state of the device. In one embodiment constituting a light logic element, a plurality of semiconductor lasers are integrated on a substrate with each respective semiconductor laser having a grating along the entirety or a portion thereof and provided with a light waveguide connecting with a waveguide of an adjacent semiconductor laser. In a bistable semiconductor laser there are provided two different conductivity type light confinement layers, an active layer comprising a multiple quantum well structure which is between the two light confinement layers, a grating provided close to the quantum well active layer. The oscillation wavelength established by the grating is shorter than the peak gain wavelength produced by the quantum well active layer.
公开日期1989-12-19
申请日期1988-03-17
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/78812]  
专题半导体激光器专利数据库
作者单位MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式
GB/T 7714
KOJIMA, KEISUKE,KYUMA, KAZUO,NODA, SUSUMU,et al. Semiconductor laser device. US4888783. 1989-12-19.

入库方式: OAI收割

来源:西安光学精密机械研究所

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