Semiconductor laser device
文献类型:专利
作者 | KOJIMA, KEISUKE; KYUMA, KAZUO; NODA, SUSUMU; KAMEYA, MASAAKI; OHTA, JUN; HAMMANAKA, KOICHI |
发表日期 | 1989-12-19 |
专利号 | US4888783 |
著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser device |
英文摘要 | In a light-responsive semiconductor device in which the laser oscillation state is controlled by incident light, a layer of material having a conductivity modulatable by light is integrated in a semiconductor laser structure and is responsive to the incident light for the control of the laser oscillation state of the device. In one embodiment constituting a light logic element, a plurality of semiconductor lasers are integrated on a substrate with each respective semiconductor laser having a grating along the entirety or a portion thereof and provided with a light waveguide connecting with a waveguide of an adjacent semiconductor laser. In a bistable semiconductor laser there are provided two different conductivity type light confinement layers, an active layer comprising a multiple quantum well structure which is between the two light confinement layers, a grating provided close to the quantum well active layer. The oscillation wavelength established by the grating is shorter than the peak gain wavelength produced by the quantum well active layer. |
公开日期 | 1989-12-19 |
申请日期 | 1988-03-17 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/78812] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | KOJIMA, KEISUKE,KYUMA, KAZUO,NODA, SUSUMU,et al. Semiconductor laser device. US4888783. 1989-12-19. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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