Manufacture of semiconductor laser device
文献类型：专利
| 作者 | HAMADA HIROYOSHI |
| 发表日期 | 1992-12-09 |
| 专利号 | JP1992355988A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To provide a method of manufacturing a semiconductor laser device high in reliability and maximum oscillation temperature. CONSTITUTION:A double hetero-structure, where an (AlGa1-x)InP diffusion layer doped with P-type carrier so as to be 10cm in carrier concentration is provided inside a P-type clad layer 5 of an AlGaInP semiconductor laser, is made to grow. Thereafter, this wafer is thermally treated, and all the P-type clad layer 5 is set to over 6X10cm in carrier concentration by the diffusion of dopant from the diffusion layer. |
| 公开日期 | 1992-12-09 |
| 申请日期 | 1991-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78816]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | HAMADA HIROYOSHI. Manufacture of semiconductor laser device. JP1992355988A. 1992-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。