単一軸モード半導体レーザ
文献类型：专利
| 作者 | 水戸 郁夫 |
| 发表日期 | 1994-04-27 |
| 专利号 | JP1994032322B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 単一軸モード半導体レーザ |
| 英文摘要 | PURPOSE:To increase the reliability and the yield in manufacture by a method wherein a buffer layer of the first conductivity type, an active layer, and a clad layer of the second conductivity type are provided on a semiconductor substrate, and the buffer layer and the active layer are formed by isolation by a region on an optical guide layer and the other region. CONSTITUTION:The non-doped InGaAsP wave guide layer 5 is laminated on the N type InP substrate 1 of the orientation of a plane (001), a periodical structure 20 parallel with the direction of (110) is formed thereon, and thereafter the right side of a stepwise difference 10 is etched with Br-methanol. Next, the N type InP buffer layer 2 and the non-doped InGaAs active layer 3 are laminated, and the P type InP clad layer 4 and a P type InGaAs cap layer 6 are laminated. After forming an SiO2 insulation film 30 thereon and exfoliating the insulation film 30 at the part of a current injected region 31, a P side metallic electrode 32 of an Au-Zn is formed. An N side metallic electrode 33 of an Au-Ge-Ni is formed on the N side. |
| 公开日期 | 1994-04-27 |
| 申请日期 | 1982-10-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78820]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | 水戸 郁夫. 単一軸モード半導体レーザ. JP1994032322B2. 1994-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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