Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | HOSOBANE HIROYUKI; MATSUMOTO AKIHIRO; MATSUI KANEKI; MORIMOTO TAIJI |
| 发表日期 | 1990-08-29 |
| 专利号 | JP1990216883A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element which can produce a high output of a laser light and stably oscillate for a long period of time by providing a plurality of sub stripe grooves on a base layer of each side of a stripelike oscillation region of an active layer, thereby extremely reducing in thickness the active layer of the oscillation region with satisfactory crystallinity. CONSTITUTION:A P-type GaAlAs clad layer 23 is laminated on a current blocking layer 12 of each window region 20a and a laser exciting region 20b, the layer 23 is formed in a recess state on an upper face above sub stripe grooves 22a and 22b, and the other part is flat. A P-type GaAlAs active layer 24 is laminated on the layer 23, and the layer 24 is also bent in a recess on an upper face above the sub stripe grooves 22a and 22b. An N-type GaAlAs clad layer 25 is laminated on the layer 24, the laminated layer 24 becomes flat on its upper face, thereby easily manufacturing the thinned active layer having satisfactory crystallinity. Therefore, a laser light can be stably oscillated with high output. |
| 公开日期 | 1990-08-29 |
| 申请日期 | 1989-02-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78833]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | HOSOBANE HIROYUKI,MATSUMOTO AKIHIRO,MATSUI KANEKI,et al. Semiconductor laser element and manufacture thereof. JP1990216883A. 1990-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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