Semiconductor device and manufacture thereof
文献类型：专利
| 作者 | HASUMI YUJI; TENMIYO JIRO; ASAHI HAJIME; KOUMAE ATSUO |
| 发表日期 | 1987-10-08 |
| 专利号 | JP1987229892A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a device, which can operate as a laser diode with a low threshold value and can operate as a bipolar transistor, whose high frequency characteristics are excellent, by forming a narrow stripe ridge guide structure with a plurality of layers, which are grown by a hetero-epitaxial method, and forming an effective P-N junction only in the vertical direction. CONSTITUTION:On a semi-insulating GaAs substrate 1, a ridge type lightguide comprising a lower N-AlGaAs clad layer 2, a P-GaAs active layer 3 and an upper N-AlGaAs clad layer 4 is formed by a self-alignment technology. An NGaAs cap layer 5, a current constriction region 6 and an SiO2 insulating layer 7 are provided. When a bias is applied between electrodes 9 and 10, the interface part of the layers 3 and 4 acts as an effective P-N junction. Thus laser oscillation occurs. when the electrodes 10, 9 and 8 are made to be a base, an emitter and a collector, N-P-N junctions are formed in the vertical direction in a narrow stripe ridge guide part comprising the layers 4' 3 and Z. The junctions operate as a vertical N-P-H transistor' in which the layer 4 is an N region, the layer 3 is a P region and the layer 2 is an N region. |
| 公开日期 | 1987-10-08 |
| 申请日期 | 1985-10-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78837]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | HASUMI YUJI,TENMIYO JIRO,ASAHI HAJIME,et al. Semiconductor device and manufacture thereof. JP1987229892A. 1987-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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