Semiconductor light-emitting element
文献类型：专利
| 作者 | KAWADA SEIJI; KOBAYASHI KENICHI; HINO ISAO |
| 发表日期 | 1987-01-24 |
| 专利号 | JP1987016592A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To constrict currents excellently, and to obtain a visible-ray semiconductor light-emitting element having superior performance and reliability by forming double hetero-structure, containing (AlxGa1-x)0.5In0.5P as an active layer and (AlyGa1-y)0.5In0.5P (1>=y>x>0) as a clad layer, and shaping a second conduction type first GaAs layer and a first conduction type second GaAs layer. CONSTITUTION:A p-Ga0.5In0.5P layer 202, (w) of which is brought to 0, and an n-GaAs layer 203 are formed onto p-(Al0.55Ga0.45)0.5In0.5P 201, (y) of which is brought to 0.55, in succession as clad layers having double hetero-structure, and part of the n-GaAs layer 203 is removed to shape an opening. The surface of Ga0.5In0.5P 202 is exposed in the opening at that time and has a small Al composition, and is hardly affected by surface oxidation. Even when second growth is conducted on the surface of an (AlwGa1-w)0.5In0.5P layer, the effect of an oxide film can be ignored when w<=0.3 holds. A p-GaAs layer 204 is shaped onto the p-Ga0.5In0.5P layer 202 and the n-GaAs layer 203 by second growth, and is not grown on the surface of the high Al composition layer, thus improving crystallizability. |
| 公开日期 | 1987-01-24 |
| 申请日期 | 1985-07-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78839]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KAWADA SEIJI,KOBAYASHI KENICHI,HINO ISAO. Semiconductor light-emitting element. JP1987016592A. 1987-01-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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