Semiconductor laser element
文献类型：专利
| 作者 | MORIMOTO TAIJI |
| 发表日期 | 1992-04-10 |
| 专利号 | JP1992109689A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent that an internal stress is concentrated to the area near the laser beam emitting point and improve reliability by providing striped mesa portions which do not contribute to laser oscillation in both sides of a mesa portion which contributes to laser oscillation of a clad layer. CONSTITUTION:An active layer 13 which will become a laser oscillating region, a clad layer 14 having striped mesa portions 14a, 14b contributing to laser oscillation and a current squeezing layer 16 for realizing laser oscillation in the active layer 13 only in the area near the mesa portion are stacked on a semiconductor substrate 10. A striped mesa portion 14b not contributing to laser oscillation is provided in both sides of the mesa portion 14a contributing to the laser oscillation. Namely, a plurality of particular points of structure exist within an element and therefore if a stress is applied to an element, an internal stress is scattered to each mesa portion, namely to the particular points. Thereby, an internal stress is no longer concentrated in the area near the laser beam emitting point and long-term reliability of element can be improved. |
| 公开日期 | 1992-04-10 |
| 申请日期 | 1990-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78843]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | MORIMOTO TAIJI. Semiconductor laser element. JP1992109689A. 1992-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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