Semiconductor laser
文献类型：专利
| 作者 | HINO ISAO |
| 发表日期 | 1991-06-28 |
| 专利号 | JP1991152983A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to start oscillating in smallest wavelength as expected by a method wherein a double hetero-structure is composed of an active layer of Ga0.5In0.5P or (AlxGa1-x)0.5In0.5P and a clad layer of (AlyGa1-y)0.5In0.5P, where B or Tl is added to one of two layers. CONSTITUTION:An Si doped n-(AlxGa1-x)0.5In0.5P clad layer 2, a B doped Ga0.5 In0.5P active layers 3, a Zn doped p-(AlyGa1-y)0.5In0.5P clad layer 4, and an Si doped n-GaAs block 5 are epitaxially grown on an n-GaAs substrate B2H6 is injected at the same time with other material gases while the active layer 3 is grown. The arrangement of Ga and In differs in degree of regularity depending on a growth condition. Added B or Tl is diffused into crystals, the crystals are arranged in disorder independent of the growth condition, and the active layer 3 keeps a large intrinsic value always. As B or Tl belongs to the group III, it is arranged on a group III auxiliary lattice and induces no defect and does not change the active layer 3 in carrier concentration. If B or Tl is added more than a specific concentration, the change of the disorder effect and a host body in Eg and refractive index and the distortion of the host body can be avoided. When B or Tl is added to a clad layer, a laser device is improved in temperature characteristics and made low in threshold. |
| 公开日期 | 1991-06-28 |
| 申请日期 | 1989-11-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78845]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HINO ISAO. Semiconductor laser. JP1991152983A. 1991-06-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。