Semiconductor laser device
文献类型：专利
| 作者 | YAMAMOTO YOUSUKE; HIGUCHI HIDEYO |
| 发表日期 | 1989-05-22 |
| 专利号 | JP1989129487A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce electrostatic capacitance due to oppositely electrodes, and to modulate a semiconductor laser device at high speed by removing a growth layer up to an insulating substrate and forming one electrode and getting rid of the growth layer up to a clad layer and shaping the other electrode. CONSTITUTION:An N electrode 1, a P electrode 2 formed onto a P-InP lower clad layer 8, an SiO2 film 3 for preventing a short circuit, an N-InGaAsP contact layer 4, an N-InP upper clad layer 5, buried layers 6, 7 and an active layer, 9 as a light-emitting region are shaped onto an insulating substrate 10. Currents are constricted by the buried layers 6, 7, and currents are injected efficiently into the active layer 9. The electrodes 3, 2 are formed on the crystal growth surface side, thus reducing electrostatic capacitance by the electrodes 1, 2, then allowing modulation at high speed. Even when the electrode 1 is shaped through isolation by a striped trench reaching the substrate 10, the same effect is acquired. |
| 公开日期 | 1989-05-22 |
| 申请日期 | 1987-11-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78847]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAMAMOTO YOUSUKE,HIGUCHI HIDEYO. Semiconductor laser device. JP1989129487A. 1989-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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