Semiconductor laser device
文献类型：专利
| 作者 | TAKIGAWA SHINICHI; SHIMIZU YUICHI |
| 发表日期 | 1992-02-13 |
| 专利号 | JP1992043693A |
| 著作权人 | MATSUSHITA ELECTRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To manufacture a distributed feedback semiconductor laser stably by a method wherein a contact layer is formed, without a clad layer, so as to be adjacent to a diffraction grating in a place other than a place where a laser beam is distribution-fed back by the diffraction grating. CONSTITUTION:An n-InGaAs current-blocking layer 2, a p-InP clad layer 3, an InGaAs active layer 4, an n-InGaAsP waveguide layer 5, a diffraction grating 8 and a dielectric clad layer 7 are formed on a p-InP substrate 1; a distribution feedback syructure is formed; a laser beam is confined inside a region 9 by means of a loss guide by the n-InGaAs current-blocking layer 2. In order to form an electrode, an n InGaAsP contact layer 6 is formed outside the laser light waveguide region 9. |
| 公开日期 | 1992-02-13 |
| 申请日期 | 1990-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78856]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRON CORP |
| 推荐引用方式 GB/T 7714 | TAKIGAWA SHINICHI,SHIMIZU YUICHI. Semiconductor laser device. JP1992043693A. 1992-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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