Semiconductor laser
文献类型：专利
| 作者 | OMURA ETSUJI |
| 发表日期 | 1992-01-07 |
| 专利号 | JP1992002191A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain sufficient impurity concentration by diffusion and to realize a long wavelength laser adapted for an electronic integrated device by forming a double hetero structure of an AlGaInAs semiconductor. CONSTITUTION:An n-type AlyGaxIn1-x-yAs lower clad layer 102, an n-type AlwGazIn1-w-zAs active layer 103 and an n-type AlyGaxIn1-x-yAs upper clad layer 104 are sequentially crystalline-grown on a semi-insulating InP substrate 101 by an organic metal vapor growth method, a double hetero structure 120 is formed, and further an n-type In0.53Ga0.47As layer 105 is grown. In order to satisfy a lattice matching, when an AlGaInAs is expressed as an AlyGaxIn1-x-yAs, (X+Y) may become about 0.47. Thus, since the active layer of a lateral junction stripe type semiconductor laser and a clad layer are formed of AlGaInAs, the impurity concentration of Zn diffusion can be sufficiently enhanced, and a practical long wavelength TJS laser can be obtained. |
| 公开日期 | 1992-01-07 |
| 申请日期 | 1990-04-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78867]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | OMURA ETSUJI. Semiconductor laser. JP1992002191A. 1992-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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