Manufacture of semiconductor laser
文献类型：专利
| 作者 | HASHIMOTO AKIHIRO; KOBAYASHI NOBUO; KAMIJO TAKESHI |
| 发表日期 | 1988-12-19 |
| 专利号 | JP1988310190A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve the surface homology of a regrown layer and to eliminate a high resistance layer on a boundary by regrowing a clad layer in a state that a layer of a composition in which an oxide layer can be easily removed by the temperature rise at the time of its regrowth even if it is oxidized is exposed at the removed section of a current narrowing layer. CONSTITUTION:A clad layer 5 on an active layer 4 is formed in a superlattice structure of GaAs and AlAs and in which the AlAs layer 7 is disposed at its uppermost layer, a current narrowing layer 6 is formed thereon, and partly removed in a stripelike state. The layer 7 of the uppermost layer of the superlattice structure of the part exposed by removing is removed, the GaAs layer 8 directly thereunder is exposed, and a clad layer 9 is regrown. Since the GaAs oxide layer is easily removed by the temperature rise at the time of its regrowth even if the layer 8 is oxidized at the time before the regrowth, the influence of the oxide layer is reduced to regrowth the layer 9. Thus, the surface homology of the clad layer is improved, and a high resistance layer is not formed on its regrown boundary. |
| 公开日期 | 1988-12-19 |
| 申请日期 | 1987-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78871]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO AKIHIRO,KOBAYASHI NOBUO,KAMIJO TAKESHI. Manufacture of semiconductor laser. JP1988310190A. 1988-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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