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文献类型：专利
| 作者 | MOGI NAOTO; WATANABE YUKIO; SHIMADA NAOHIRO |
| 发表日期 | 1992-08-12 |
| 专利号 | JP1992049792B2 |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To contrive to reduce the threshold value by enabling the reduction of the reactive current flowing through an active layer on both sides of a stripe groove part by a method wherein a p type inversion layer is formed in an n type clad layer. CONSTITUTION:An n type clad layer 12, active layer 13 and a p type clad layer 14 are successively grown on an n type compound semiconductor substrate 11, resulting in the formation of a double hetero junction. Besides, an n type current block layer 15 grown and formed on the clad layer 14 and provided with the stripe groove reaching the clad layer 14 and a p type coat layer 16 grown and formed on the block layer by including the groove are furnished. Then, the part of the clad layer 12 except for the region immediately under the stripe groove and in contact with the active layer is inverted into p type. |
| 公开日期 | 1992-08-12 |
| 申请日期 | 1983-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78892]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | MOGI NAOTO,WATANABE YUKIO,SHIMADA NAOHIRO. -. JP1992049792B2. 1992-08-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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