Semiconductor laser diode
文献类型：专利
| 作者 | UENISHI KATSUZOU; NISHI SEIJI; FURUKAWA RIYOUZOU |
| 发表日期 | 1983-08-18 |
| 专利号 | JP1983139484A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | PURPOSE:To obtain a diode having strength against disturbance of an external circuit and small threshold current by constructing a positive feedback loop of an annular resonator structure, and coupling a waveguide of equal or different width to or from the width of its waveguide to the resonator as an output waveguide. CONSTITUTION:An output waveguide 12 is coupled on a linear line of an annular resonator 10, or coupled on a tangential line of the resonator 10. If the width of the output waveguide 12 is the same as that of a light waveguide of the resonator 10, the resonator 10 can be preferably coupled on a tangential line with large laser output. Even if the width of the waveguide 12 is varied, the resonator 10 can be variably coupled. In this case, the diode is a diode in which an N type GaAlAs clad layer 2 grown on the N type GaAs substrate 1, an N type GaAs active layer 3 and a P type GaAlAs clad layer 4 are surrounded by high resistance GaAlAs layer 6. |
| 公开日期 | 1983-08-18 |
| 申请日期 | 1982-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78898]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | UENISHI KATSUZOU,NISHI SEIJI,FURUKAWA RIYOUZOU. Semiconductor laser diode. JP1983139484A. 1983-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。