Semiconductor laser device
文献类型：专利
| 作者 | KURODA TAKARO; TSUJI SHINJI; OISHI AKIO; NAKAMURA HITOSHI; MATSUMURA HIROYOSHI |
| 发表日期 | 1987-07-15 |
| 专利号 | JP1987159485A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To easily manufacture the devices with high yield and to relatively prolong the life of elements by implanting ions obliquely twice from the right and left upper positions so as to form a current constriction part having an implantation exciting width which is half a mask width or less. CONSTITUTION:On an InP substrate 5, an InP cladding layer 4, an InGaAsP active layer 3, and an InP cladding layer 2 are grown in order by gas-phase growth and a stripe-form mask 7 is formed on them. The width of the mask 7 is determined to be 2-3 times an exciting width of the active layer 3 which is 1mum, for example. The exposed part on the side of the stripe is 2-5mum. From the upper positions of this stripe, ion implantation is done once respective ly from the right and left positions with a slant of about 45 deg. The ion species is one that forms a P-N junction between it and the cladding layer 2 and the front end of an ion implantation layer after annealing is stopped just before the active layer 3. |
| 公开日期 | 1987-07-15 |
| 申请日期 | 1986-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78900]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KURODA TAKARO,TSUJI SHINJI,OISHI AKIO,et al. Semiconductor laser device. JP1987159485A. 1987-07-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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