Semiconductor laser device
文献类型：专利
| 作者 | TAJIRI FUMIKO; KUME MASAHIRO; ITOU KUNIO; WADA MASARU; SHIMIZU YUUICHI; HAMADA TAKESHI |
| 发表日期 | 1985-07-11 |
| 专利号 | JP1985130186A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable low noise action by realizing stable single-vertical-mode oscillation by a method wherein the title device operating by basic lateral mode oscillation is made free of a current-injected region at the center. CONSTITUTION:A groove 2 and a groove 10 deeper than the groove 2 are formed on an n type substrate Next, when an n type clad layer 3 and an n type active layer 4 are formed so as to fill up the grooves 2 and 10, the layer 4 comes to a form of downward arc at the center in the longitudinal direction. A p type clad layer 5 and an n type layer 6 are successively formed thereon, and a current-injected region 7 is formed immediately above the groove 2. Such a formation realizes basic lateral mode oscillation. Then, the light generating in the layer 4 propagates in a direction parallel with the region 7, and is then amplified because of the gain due to injected currents. However, since the layer 4 forms an arc at the center, the light penetrates out to the layer 3, resulting in loss. Thus, single vertical mode oscillation is realized always by the inhibition of the basic lateral mode oscillation and two streaks of vertical mode oscillation, and then low noise action is enabled. |
| 公开日期 | 1985-07-11 |
| 申请日期 | 1983-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78906]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | TAJIRI FUMIKO,KUME MASAHIRO,ITOU KUNIO,et al. Semiconductor laser device. JP1985130186A. 1985-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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