Semiconductor laser device
文献类型：专利
| 作者 | SHIOMOTO TAKEHIRO |
| 发表日期 | 1989-07-11 |
| 专利号 | JP1989175289A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make it possible to perform an erase operation, write and read operations in parallel, by providing a chip with a plurality of lasing regions where laser beams having different spot patterns are emitted. CONSTITUTION:A substrate 7 allows a current blocking layer 8 to grow thereon. A first as well as second V-shaped grooves 9, 10a and 10b are formed and further, a clad lever 11, an active layer 12, a clad layer 13, and a cap layer 14 are formed in order. After that, electrodes 15a and 15b and a p-side electrode 16 are formed. The space between the first and second lasing regions is isolated by chemical etching to form a mesa groove part 17. In this way, the first lasing region including a single V-shaped groove part 9 and the second lasing region are isolated electrically to form a structure where each region can be driven independently. |
| 公开日期 | 1989-07-11 |
| 申请日期 | 1987-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78910]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SHIOMOTO TAKEHIRO. Semiconductor laser device. JP1989175289A. 1989-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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