Semiconductor laser device
文献类型：专利
| 作者 | KANENO, NOBUAKI; IKEDA, KENJI |
| 发表日期 | 1988-07-12 |
| 专利号 | US4757510 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA, 2-3 MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device which includes a first conductivity type semiconductor substrate; a first conductivity type first cladding layer, an active layer, and a second conductivity type second cladding layer successively provided on the substrate, wherein both the cladding layers have energy band gaps larger than that of the active layer; a first conductivity type current blocking layer having an energy band gap larger than that of the second cladding layer being provided on the second cladding layer, having a groove removed therefrom so as to form an exposed stripe portion on the second cladding layer; and a second conductivity type third cladding layer having an energy band gap smaller than that of the current blocking layer and larger than that of the active layer formed on the current blocking layer and on the stripe portion. |
| 公开日期 | 1988-07-12 |
| 申请日期 | 1986-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78913]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA, 2-3 MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, JAPAN |
| 推荐引用方式 GB/T 7714 | KANENO, NOBUAKI,IKEDA, KENJI. Semiconductor laser device. US4757510. 1988-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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