Semiconductor laser
文献类型：专利
| 作者 | SUZAKI SHINZOU |
| 发表日期 | 1985-06-22 |
| 专利号 | JP1985116185A |
| 著作权人 | FUJIKURA DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To rapidly suppress a leakage current by sequentially laminating the first reverse conductive type or undoped semiconductor layer to a substrate, and the same conductive type second semiconductor layer as the substrate on the substrate at both sides of mesa stripe. CONSTITUTION:A current block layer 13 is formed on a substrate 1 at the side of a mesa stripe 1a, and the same conductive type clad layer 14 as the substrate 1 is formed on the layer 13. In this conductive type, the junction of the layers 14, 14 is formed in P-N junction, and the junction of the layers 13, 14 operates as a diode to interrupt the leakage current. |
| 公开日期 | 1985-06-22 |
| 申请日期 | 1983-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78914]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA DENSEN KK |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZOU. Semiconductor laser. JP1985116185A. 1985-06-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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