Semiconductor laser device
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; ONO YUUICHI; KAJIMURA TAKASHI; NAKAMURA MICHIHARU |
| 发表日期 | 1985-03-07 |
| 专利号 | JP1985042885A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent the decrease in the effect of current stricture due to minority carrier in an abforption layer by a method wherein a current block layer of the same conductivity type as that of a substrate is provided between the photo absorption layer and a clad layer of a conductivity type different from that of the substrate. CONSTITUTION:The N-clad layer 1mum 2, an undoped active layer 0.07mum 3, the P- clad layer 0.25mum 4, the N-current block layer 0.1-0.2mum 5, and the N-photo absorption layer 0.4mum 6 are successively crystal-grown. Next, etching is carried out down to the layer 5 to a stripe form of a width 2mum, and a P-layer 1mum 7 and a P-cap layer 0.5mum 8 are crystal-grown thereon. This construction enables the minority carriers generated by the photo absorption of the layer 6 to be blocked from diffusion from the layer 5 toward the layer 3. Therefore, the effect of current stricture due to the minority carriers genereted in the layer 6 does not decrease, a low threshold current can be obtained, and excellent single mode oscillation can be performed. |
| 公开日期 | 1985-03-07 |
| 申请日期 | 1983-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78922]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,ONO YUUICHI,KAJIMURA TAKASHI,et al. Semiconductor laser device. JP1985042885A. 1985-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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