Manufacture of semiconductor element
文献类型：专利
| 作者 | HASEGAWA MITSUTOSHI |
| 发表日期 | 1989-07-17 |
| 专利号 | JP1989179482A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor element |
| 英文摘要 | PURPOSE:To enable an accurate etching for the formation of a ridge by a method wherein the section of the ridge is observed by a suspending an etching before the etching to reaches to the required final etching depth, and an etching time required for the final etching depth is calculated again. CONSTITUTION:A buffer layer 12, a clad layer 13, an active layer 14 of multiple quantum well structure, a clad layer 15, and a cap layer 16 are successively formed on a substrate 11 for formation of a wafer. Etching is performed using a mask 17 until it reaches to the active layer 14, and then a part of the wafer is cleaved from the upper side of a [110] plane perpendicularly to the above mask 17 and the section of the cleaved part is observed to measure directly the distance XR from the active layer 14 to the base of a ridge. An etching time required for the final etching depth is recalculated basing on the distance XR, and then etching is executed so as to reach to the final etching depth for the formation of the ridge. By these processes, the distance XR from the active layer 14 to the base of the ridge can be made accurate. |
| 公开日期 | 1989-07-17 |
| 申请日期 | 1988-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78925]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | HASEGAWA MITSUTOSHI. Manufacture of semiconductor element. JP1989179482A. 1989-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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