Semiconductor laser
文献类型：专利
| 作者 | WATANABE MASANOBU; IAN HIYUU HOWAITO; JIYON EDOWAADO KIYARORU |
| 发表日期 | 1991-12-10 |
| 专利号 | JP1991278490A |
| 著作权人 | 工業技術院長 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To clarify the condition of the generation of a crossing mode in a twin stripped laser and further ensure bistability between the crossing mode by performing computer simulation and a theoretical analysis. CONSTITUTION:There are successively formed on a GaAs substrate 1 an n-GaAs 2, an n-Al0.35Ga0.65As 3, an Al0.05Ga0.95As active layer 4, a p-Al0.35Ga0.65As 5, a p-GaAs layer 6 and an SiN insulating layer 7. Then, metal layers 8, 9 each comprising Ni/AuGe/Ni and Cr/Au are provided on opposite sides of the substrate. Waveguides parallel to each other are formed at the lower part of parallel two electrodes 10, 1 When the cavity length L of a laser resonator is shorter than a coupling length Lc (in the two parallel waveguides, a length where light existent at one waveguide is transferred to the other) a bistable laser generating a crossing mode can be ensured. |
| 公开日期 | 1991-12-10 |
| 申请日期 | 1990-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78936]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 工業技術院長 |
| 推荐引用方式 GB/T 7714 | WATANABE MASANOBU,IAN HIYUU HOWAITO,JIYON EDOWAADO KIYARORU. Semiconductor laser. JP1991278490A. 1991-12-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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