Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | YOSHIDA KAZUTOMI; MIZUOCHI HITOSHI |
| 发表日期 | 1992-02-10 |
| 专利号 | JP1992038890A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent a leak current from flowing by forming spacer layers for current checking on both sides of a double heterostructure region. CONSTITUTION:A p-InP spacer layer for checking currents approximately 1mum thick is interposed between a double heterostructure region and a current checking region 14, and this p-InP spacer layer 5 performs the same action as the p-InP current checking layer 7a in a semiconductor laser device, and an n-InP current checking layer 6 and a p-InP current checking layer 7 perform the same actions as the n-InP current checking layer 6 and the p-InP current checking layer 7b in the semiconductor laser device, respectively. Hereby, the leak path from the current checking layer to a clad layer 4 or 8 is never formed, and it has the effect that the leak current becomes extremely small. Moreover, it does not need the solid phase diffusion, wherein accurate control is mandatory, for converting one part of the n-InP current checking layer into p-InP, so a semiconductor laser device, which operates at a low threshold and excellent in temperature properties, can be obtained with simple process and at high yield rate. |
| 公开日期 | 1992-02-10 |
| 申请日期 | 1990-06-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78958]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YOSHIDA KAZUTOMI,MIZUOCHI HITOSHI. Semiconductor laser device and manufacture thereof. JP1992038890A. 1992-02-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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