Laser diode
文献类型：专利
| 作者 | TAKESHIMA MASUMI |
| 发表日期 | 1985-02-19 |
| 专利号 | JP1985032385A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode |
| 英文摘要 | PURPOSE:To obtain a laser diode which can be manufactured more simply than a DFB laser by providing multilayers alternately laminated with insulator layers of two different types of refractive indexes on the reflecting end of an active layer to become a resonator. CONSTITUTION:Multilayers 4 are formed over clad layers 2, 3 from the outside of the reflecting end of an active layer 1 at both sides of the layer 1 as a resonator. The layers 4 are, for example, formed by alternately laminating Al2O3 layers 5a-5d and SiO2 layers 6a-6c. The thicknesses of the layers become [n+ (1/4)]lambda, where lambda is the wavelength of the laser light in the substance, where n is an integer number including 0, the reflection from the end becomes maximum. The selectivity of the wavelength becomes higher due to Bragg's reflection, when the number of the layers 4 is more. When the thickness of the layer of the multilayers 4 is integer times of lambda or [n+(1/2)]lambda, where n is integer number including 0, a reflecting film 7 made of Au is, for example, formed on the outer surface of the layers 4 to reliably maintain high reflectivity. |
| 公开日期 | 1985-02-19 |
| 申请日期 | 1983-08-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78963]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | TAKESHIMA MASUMI. Laser diode. JP1985032385A. 1985-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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