Buried type semiconductor laser
文献类型：专利
| 作者 | YAGI KATSUMI |
| 发表日期 | 1991-04-02 |
| 专利号 | JP1991076288A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser |
| 英文摘要 | PURPOSE:To enable layers to grow as buried at a low temperature by a method wherein the layers other than a carrier confinement layer are made equal to or smaller than a prescribed value of 0.2 in the compositional ratio of Al, and a layer whose compositional ratio of Al varies in a thicknesswise direction is provided between an active layer and the carrier confinement layer. CONSTITUTION:Prescribed layers are made to grow continuously on an N-GaAs substrate 1 by the use of an MBE method. The Al compositional ratio of both clad layers 3 and 9 is 0.2, and a adjusting layers 5 and 7 are provided between an active layer 6 and each of carrier confinement layers 4 and 8 to decrease the anharmonicity of Al compositional ratio between the carrier confinement layers 4 and 8 and the active layer 6. The carrier confinement layer 4 (8) is gradually increased in the Al compositional ratio (x) starting from its interface (x=0.2) with the clad layer 3 (9) toward its interface (x=0.4) with the adjusting layer 5 (7) as receding from the former interface; on the other hand, the adjusting layer 5 (7) is gradually decreased in the Al compositional ratio (y) starting from its interface (y=0.4) with the carrier confinement layer 4 (8) toward its interface (x=0.25) with the active layer 6 as receding from the former interface. After the above first crystal growth is finished, a laminated body is subjected to a mesa etching using a stripe-like resist. |
| 公开日期 | 1991-04-02 |
| 申请日期 | 1989-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78969]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YAGI KATSUMI. Buried type semiconductor laser. JP1991076288A. 1991-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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