Liquid phase epitaxial growth method
文献类型：专利
| 作者 | YAMAMOTO KOUSAKU; NISHIJIMA YOSHITO; FUKUDA HIROKAZU; SHINOHARA KOUJI |
| 发表日期 | 1984-05-08 |
| 专利号 | JP1984079533A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growth method |
| 英文摘要 | PURPOSE:To enable epitaxial growth under a supercooling state by a method wherein first and second sliding members are superposed and disposed on a susceptor, a crystalline layer forming material in the solution reservoir of the second sliding member is brought previously to the state of a saturated solution, the second sliding member is moved to drop the saturated solution into the liquid reservoir of the first sliding member and the first sliding member is moved to bring the solution into contact with a substrate. CONSTITUTION:The first sliding member 26 with through-holes 23-25 encasing a crystal material to be formed and the second sliding member 30 with through- holes 27-29 are superposed and disposed on the susceptor 22 made of carbon, to an end section thereof the PbTe substrate 21 is buried. The PbSnTe materials 32, 34, 36 functioning as a buffer layer, an active layer and a confining layer are each entered in the through-holes 27, 28, 29, and these compositions are changed previously by dissolving dummy thin-boards 31A and 31B, 33A and 33B and 35A and 35B along the materials. These solutions are brought to a supercooling state, the second sliding member 30 is moved, the solutions are dropped into the holes of the first sliding member 26, the member 26 is slid, and the substrate 21 is moistened with these solutions. |
| 公开日期 | 1984-05-08 |
| 申请日期 | 1982-10-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78974]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO KOUSAKU,NISHIJIMA YOSHITO,FUKUDA HIROKAZU,et al. Liquid phase epitaxial growth method. JP1984079533A. 1984-05-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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