Manufacture of semiconductor laser
文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; HASHIMOTO AKIHIRO; WATANABE NOZOMI |
| 发表日期 | 1990-12-06 |
| 专利号 | JP1990296384A |
| 著作权人 | HIKARI GIJUTSU KENKYU KAIHATSU |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To contrive the prolongation of the longevity of a device and the simplification of the manufacturing process of the device by a method wherein at least a compound semiconductor clad layer and an active layer are grown on the narrow striped region of an Si substrate to form a laser structure. CONSTITUTION:V-shaped grooves 2a and 2b formed using the face (111) as their sidewalls are formed in the surface of an N-type Si substrate at a prescribed interval and after a striped region 1a of a prescribed width is formed between the grooves 2a and 2b, at least an Si-doped AlxGa1-xAsl clad layer, a nondoped AlyGa1-yAs/GaAs multi quantum well active layer 5 and a P-type AlxxGa1-xAsl clad layer 6 are selectively grown on the region 1a using a low pressure organometallic vapor growth method, whereby a laser structure having a current constricting mechanism and a refractive index waveguide mechanism is formed on the region 1a. Thereby, the prolongation of the longevity of an element and the simplification of the manufacturing process of the device are contrived. |
| 公开日期 | 1990-12-06 |
| 申请日期 | 1989-05-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78999]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJUTSU KENKYU KAIHATSU |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,HASHIMOTO AKIHIRO,WATANABE NOZOMI. Manufacture of semiconductor laser. JP1990296384A. 1990-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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