Manufacture of semiconductor laser
文献类型：专利
| 作者 | NIDOU MASAAKI |
| 发表日期 | 1991-02-12 |
| 专利号 | JP1991032085A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To prevent end face destruction by providing a plurality of stepped mesa parts and confining the laser light amplified through an active layer in a semiconductor layer at the end face of a resonator to reduce light absorption. CONSTITUTION:A p-type Al0.5Ga0.5As layer 2, an n-type Al0.3GaAs light guide layer 3 are successively formed on an n-type GaAs substrate Then, a mesa 4 reaching the substrate 1 is formed by wet etching, and a mesa 5 consisting of the substrate 1 is formed on this mesa 4 by removing the layers 2, 3 in a partial region. Further, n-type and p-type Al0.5Ga0.5As layers 6, 9 and 8, 10, an active layer 7, and a p-type GaAs layer are grown in the predetermined order. Then,m a part of the mesa 4 is caused to be a resonator end face, and a semiconductor layer, whose band gap is larger than that of the active layer 7, is formed on the substrate The semiconductor layers 7-10 have a refractive index larger than that of the semiconductor layers 2-7. The surface of the mesa 4, 5 has a step and the laser light amplified by the active layer 7 is waveguided by the guide layer 3, so that the light absorption at the resonator end face is reduced and the end face destruction can be prevented. |
| 公开日期 | 1991-02-12 |
| 申请日期 | 1989-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79013]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NIDOU MASAAKI. Manufacture of semiconductor laser. JP1991032085A. 1991-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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