Optical semiconductor device
文献类型：专利
| 作者 | OOBE ISAO; TODOROKI SATORU; SAWAI MASAAKI |
| 发表日期 | 1984-12-26 |
| 专利号 | JP1984231885A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | PURPOSE:To flow all injected currents through an active layer, and to obtain an optical semiconductor device having high reliability and long life by laminating a semiconductor layer containing the active layer on a semiconductor substrate, growing the semiconductor layer in an epitaxial manner in a liquid phase, mesa- etching the grown layer and previously coating the interface of the grown layer with an insulating protective film. CONSTITUTION:An N type InP light guide layer 15, an N type or P type InGaAsP active layer 16, a P type InP light guide layer 17, and a P type InGaAsP cap layer 18 are laminated on an N type InP substrate 14, and grown in an epitaxial manner in a liquid phase. A striped protective film 19 consisting a of SiO2 or Al2O3 or the like in predetermined size is formed on the layer 18, and laminate is mesa-etched until etching intrudes to the layer 15 by using 1% bromine methanol while employing the protective film as a mask. The film 19 is removed, the whole exposed surface is coated with a protective film 20 composed of SiO2, Al2O3 or the like extending over the upper section of the layer 15 from a mesa section, and the upper section of the layer 18 is removed and a P type diffusion region 21 for ohmic contact intruding into the layer 17 is formed in the removed section. |
| 公开日期 | 1984-12-26 |
| 申请日期 | 1983-06-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79022]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | OOBE ISAO,TODOROKI SATORU,SAWAI MASAAKI. Optical semiconductor device. JP1984231885A. 1984-12-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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