Optoelectronic integrated circuit and manufacture thereof
文献类型：专利
| 作者 | ONAKA SEIJI; SHIBATA ATSUSHI |
| 发表日期 | 1989-06-05 |
| 专利号 | JP1989143383A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optoelectronic integrated circuit and manufacture thereof |
| 英文摘要 | PURPOSE:To simultaneously form a graft base and a P-type clad layer of a laser by forming an active layer having smaller band gap than that of an N-type clad layer formed on a substrate and a P-type photoconductive layer having larger band gap than that of the active layer. CONSTITUTION:N type high and low density InP clad layers 102, 103, an active layer 104 having smaller band gap than that of the layer 103, a P-type photoconductiver layer 105 having larger band gap than that of the layer 104, an N-type emitter layer 106, and an N-type emitter contact layer 107 are sequentially formed on an InP substrate 10 When it is etched to bury a P-type clad layer 111 and a P-type contact layer 112, they become a buried layer having the layer 106 as a current block layer and a hetero junction bipolar transistor having the layer 111 as a graft base are provided as a basic structure. This is etched to form an integrated circuit by providing isolating groove 115, electrodes 118, 119, 120, 121, 122, etc. |
| 公开日期 | 1989-06-05 |
| 申请日期 | 1987-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79026]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ONAKA SEIJI,SHIBATA ATSUSHI. Optoelectronic integrated circuit and manufacture thereof. JP1989143383A. 1989-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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