Semiconductor laser device
文献类型：专利
| 作者 | TATSUOKA KAZUKI; TAKIGAWA SHINICHI; HAMADA TAKESHI; ITO KUNIO |
| 发表日期 | 1988-07-07 |
| 专利号 | JP1988164385A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the film-thickness controllability and flatness of an active layer, and to obtain low threshold currents with excellent reproducibility by forming each layer, including the active layer and a current blocking layer onto a substrate to which a ridge is shaped. CONSTITUTION:An N-type InP clad layer, a non-doped InGaAsP active layer 3, a P-type InP clad layer 4, a P-type InP layer 5, an N-type InP current blocking layer 6, a P-type InP layer 7 and a P-type InGaAsP cap layer 8 are formed onto an N-type InP substrate 1, to which a ridge is shaped, in succession, and electrodes 9, 10 are formed onto upper and lower surfaces. Consequently, since the active layer 3 is shaped onto the ridge, a crystal growth rate on the ridge is made slower than those of sections except the ridge, thus easily controlling film thickness, then improving the controllability of film thickness and flatness. Accordingly, an element oscillating by low threshold currents can be manufactured with excellent reproducibility. |
| 公开日期 | 1988-07-07 |
| 申请日期 | 1986-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79030]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TATSUOKA KAZUKI,TAKIGAWA SHINICHI,HAMADA TAKESHI,et al. Semiconductor laser device. JP1988164385A. 1988-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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