Manufacture of semiconductor device
文献类型：专利
| 作者 | KAMIJIYOU TAKESHI; IMANAKA KOUICHI |
| 发表日期 | 1985-04-10 |
| 专利号 | JP1985062175A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To make the integration of the title device feasible by a simple process by a method wherein, when semiconductor laser elements and FET elements are provided on the same semiconductor substrate, a mesa type laser element layers are formed on the central part of the surface of the substrate to be encircled by electric current and light confining layers and then the FET element layers electrically separated from the laser element layers are provided on the confining layers. CONSTITUTION:A P type InP the first clad layer 21, an InGaAsP active layer 22 and an N type InP the second clad layer 23 are laminated in order on a P type InP substrate 20 and then etched into mesa type using an etching mask 24 to expose the surface of the substrate 20 located on both sides of the mesa type. Next the mask 24 is removed and a highly resistive AlGaAs layers 25 to be electric current and light confining layers are grown around the mesa type to be the laser elements by means of organic metal vapor growing process and then N type GaAs layers 2b electrically separated from the mesa type are laminated on the layers 25 with the edges of the layers 26 lined up to utilize these parts as FET element regions. Through these procedures, planar type compound elements may be easily formed on the same substrate. |
| 公开日期 | 1985-04-10 |
| 申请日期 | 1983-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79034]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | KAMIJIYOU TAKESHI,IMANAKA KOUICHI. Manufacture of semiconductor device. JP1985062175A. 1985-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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