Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | IKEDA TOSHIYUKI |
| 发表日期 | 1990-03-23 |
| 专利号 | JP1990082679A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To prevent the nonoccurrence of growing or mask exfoliation caused by slides which used to occur in time of the liquid growth of buried layers, by forming a mesa stripe through wet etching to a multilayered semiconductor lamination structure having an activated layer, and making buried layers grow on both sides of the mesa stripe by a slide boat method. CONSTITUTION:An n-type InP buffer layer 2, an InGaAsP activated layer 3, a p-type InP clad layer 4, and a p-type InGaAsP cap layer 5 are formed by a liquid growth method on an n-type InP substrate 1 in order. Then, an SiO2 film is formed on all the surface of the p-type InGaAsP cap layers 5. After that, an SiO2 stripe mask 6 and a photoresist film 7 are formed. Next, a glass mask for contact exposure 8 is aligned with the center of the SiO2 stripe mask 6 and exposed from upside, and the photoresist film 7 is removed. Then a p-type InP buried layer 9 and an n-type InP buried layer 10 are formed by a liquid growth method on the side of the mesa in order. Next, the SiO2 stripe mask 6 and InGaAsP cap layer 5 above the mesa are removed, and a p-type InP clad layer 11 and a p-type InGaAsP contact layer 12 are grown in order. |
| 公开日期 | 1990-03-23 |
| 申请日期 | 1988-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79040]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IKEDA TOSHIYUKI. Manufacture of semiconductor light emitting device. JP1990082679A. 1990-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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