Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | MIYAZAWA SEIICHI |
| 发表日期 | 1989-08-18 |
| 专利号 | JP1989206681A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To protect a light emitting section against damage so as to obtain a laser long in a life span by a method wherein a diffraction grating is formed on the surface of a ridge-shaped protruding semiconductor layer. CONSTITUTION:An active layer 34, a clad layer, and a contact layer 37 are successively laminated on a clad layer 33. A SiO2 film 40 is formed on the water built as mentioned above, and a resist 41 is applied thereon, which is subjected to exposure using argon laser rays. A part except where the SiO2 film 40 is formed is formed through a wet etching taking advantage of the resist 41 patterned in period of 2260Angstrom . In result, diffraction gratings 44 and 43 are formed on the side face of the ridge and the etched base respectively. By these processes, a wavelength stable type laser can be constructed without giving any damage to a light emitting section. |
| 公开日期 | 1989-08-18 |
| 申请日期 | 1988-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79047]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | MIYAZAWA SEIICHI. Semiconductor laser and manufacture thereof. JP1989206681A. 1989-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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