Variable wavelength semiconductor laser
文献类型：专利
| 作者 | SASAKI TATSUYA; SAKATA YASUTAKA |
| 发表日期 | 1992-10-05 |
| 专利号 | JP1992279078A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Variable wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the occurrence of leakage currents so as to increase the optical output of the title laser and widen the wavelength variable width by inverting a laminated n-type semiconductor contact layer and semiconductor current blocking layer to p-type and bringing an n-type semiconductor base layer into contact with the n-type semiconductor contact layer. CONSTITUTION:InGaP tuning layer 4, n-type InP base layer 5, active layer 6, the first p-type clad layer 7 are formed by selective growth. All of an n-type InGaAsP contact layer 11, p-type current block layer 13, and n-type current block layer 14 which are grown after an SiO2 film is removed are formed of InGaAsP similar to the layer 7 and the layer thickness on the (111) B plane is made extremely thin. In addition, the n-type layers formed on the (111) B plane are inverted to p-type so that the layers do not interfere with a laser driving current 41 flowing to the first clad layer 7. |
| 公开日期 | 1992-10-05 |
| 申请日期 | 1991-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79048]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SASAKI TATSUYA,SAKATA YASUTAKA. Variable wavelength semiconductor laser. JP1992279078A. 1992-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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