半導体レーザ
文献类型：专利
| 作者 | 松岡 隆志; 柴田 典義 |
| 发表日期 | 1994-07-20 |
| 专利号 | JP1994054825B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To obtain a high efficiency, a high output and a high speed modulation characteristic and to obtain a semiconductor laser having an easy manufacturing process and high yield production by burying a buried region of a side face parallel to the light propagating direction of a stripelike active region with a semi-insulating group II-VI compound material. CONSTITUTION:A current is injected from a metal electrode 8 to arrive at a metal electrode 9. In this case, the current is narrowed by an insulating diffusion stopping layer 6 and a buried layer 7, and injected only to an active layer 3. Since the layers 6, 7 are formed of a material having lower equivalent refractive index when a semiconductor substrate 1, a clad layer 2, an active layer 3, a clad layer 4 and a cap layer 5 are regarded as being one layer, the light can be enclosed in the layer 3. Further, since the layers 6, 7 are transparent, the light oozed from the layer 3 to the layers 6, 7 is not absorbed. Further, since the layers 6, 7 between the electrodes 8 and 9 do not have a junction in an elevational direction, no electric capacity is provided, and a high efficiency, a high output, a low threshold and a high speed modulation are performed. |
| 公开日期 | 1994-07-20 |
| 申请日期 | 1987-11-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79063]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 松岡 隆志,柴田 典義. 半導体レーザ. JP1994054825B2. 1994-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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