Semiconductor laser device
文献类型：专利
| 作者 | NAKANO MUNEAKI; HIRAYAMA FUKUICHI; YOSHIKAWA AKIO; WADA MASARU |
| 发表日期 | 1988-07-26 |
| 专利号 | JP1988181494A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To inject efficiently an electric current into a groove part by forming a semiconductor multilayer film consisting of two clad layers, an active layer as well as a cap layer as a top one on a semiconductor substrate having two parallel protruding parts by interposing a groove having a prescribed form between the above protruding parts and by forming the groove in a cap layer that is parallel to the groove on the substrate and is located right above the substrate, thereby forming a zinc diffusion region in the cap and the second clad layers. CONSTITUTION:Two parallel ridges are formed on an N-type GaAs substrate 1 by interposing a groove between two ridges. The first clad layer 3 composed of an N-type GaAlAs layer as the first layer, an active layer 4 composed of non-doped GaAs layer as the second layer, the second clad layer 5 composed of P-type GaAlAs layer as the third layer, a cap layer 6 composed of an N-type GaAs layer as the fourth layer grow in sequence on the ridges continuously. After a V-shaped groove 10 is formed at the cap layer 6 of the fourth layer located right above this groove, zinc is diffused on the whole plane of this layer and a zinc diffused region 7 is formed. After that, a P-side ohmic electrode 9 and an N-side ohmic electrode 10 are formed. A prepared wafer is cloven and a laser element is obtained. |
| 公开日期 | 1988-07-26 |
| 申请日期 | 1987-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79072]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAKANO MUNEAKI,HIRAYAMA FUKUICHI,YOSHIKAWA AKIO,et al. Semiconductor laser device. JP1988181494A. 1988-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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