Semiconductor laser device
文献类型：专利
| 作者 | IWAI NORIHIRO; MATSUMOTO SHIGETO |
| 发表日期 | 1989-06-12 |
| 专利号 | JP1989149497A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To facilitate coupling of a light source with an optical fiber by a method wherein two or more laser emitting sections different from each other in oscillating frequency are provided onto the same semiconductor substrate being insulated from each other. CONSTITUTION:An n-type InP clad layer 2, an InGaAsP active layer 3, a p-type InP clad layer 4, and a p-type InGaAsP cap layer 5 are successively laminated to form a double hetero structure on a semi-insulating InP substrate 1, which is subjected to an etching so as to form a stripe-like vertical mesa. Next, a semi-insulating InP layer 9 is selectively grown on both sides of the vertical mesa, an n-type InP clad layer 2, an InGaAsP active layer 3', an n-type InP clad layer 2, and a P-type InGaAs cap layer 5 are successively grown on both the sides of the mesa, and a Zn diffusion region B is formed apart from the mesa through a selective diffusion. Lastly, a p-type electrode 6 and n-type electrodes 7 and 7' are formed. By these processes, a buried type laser emitting section 10 and a diffusion stripe laser emitting section 20 can be formed close to each other and electrically insulated from each other. |
| 公开日期 | 1989-06-12 |
| 申请日期 | 1987-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79074]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IWAI NORIHIRO,MATSUMOTO SHIGETO. Semiconductor laser device. JP1989149497A. 1989-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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