Semiconductor laser
文献类型：专利
| 作者 | KAKIMOTO SHIYOUICHI; MIHASHI YUTAKA; TAKAMIYA SABUROU |
| 发表日期 | 1984-04-02 |
| 专利号 | JP1984056786A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser of small noises and small astigmatism by a method wherein a light is wave-guided by a gain guide at the center of an active layer, thus oscillated by multi-modes, and a wave surface bent at the center is corrected in the neighborhood of two end surfaces. CONSTITUTION:The active layer 13 one of continuous semiconductor layers is flat and has a uniform thickness in the direction crossing the longitudinal direction of a stripe electrode 3 which connects the two end surfaces 4 and 5, and then bent in the direction crossing the longitudinal direction of the electrode 3 in the neighborhood of the surfaces 4 and 5. The thickness of the electrode 3 at the center is formed thicker than those of both edges, and the light is wave- guided along the thick part of the layer 13 at the center of the layer, resulting in the oscillation of the multi-modes. Besides, in the neighborhood of the surfaces 4 and 5, the wave surface bent at the center is corrected by making the distribution of refractive indices reverse to that at the center. Thereby, the semiconductor laser which restrains the increase of noises accompanied with the variations of temperature or current and has the small astigmatism can be obtained. |
| 公开日期 | 1984-04-02 |
| 申请日期 | 1982-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79077]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | KAKIMOTO SHIYOUICHI,MIHASHI YUTAKA,TAKAMIYA SABUROU. Semiconductor laser. JP1984056786A. 1984-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。