Manufacture of semiconductor light emitting element
文献类型：专利
| 作者 | KAWAMURA YUICHI; WAKITA KOICHI; ITAYA YOSHIO; YOSHIKUNI YUZO; ASAHI HAJIME |
| 发表日期 | 1987-10-08 |
| 专利号 | JP1987229990A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting element |
| 英文摘要 | PURPOSE:To obtain a semiconductor light emitting device not to generate extension of width of an oscillated laser beam even at high speed modulation time by a method wherein a semiconductor layer to construct a diffration grating feedback laser is formed, then a part of the semiconductor layer thereof is removed by etching, and an electric light absorbing modulator having a quantum well structure is composed thereon. CONSTITUTION:After a diffraction grating is formed to an InGaAlAs layer 5, layers 6,7 are grown to form a laminate. Then, a part of the laminate is etched selectively up to the upper part of an InGaAlAs stop layer 2 using an SiO2 film 16 or the like as a mask. Then, respective layers from a layer 8 up to a layer 12 are grown in order on the InGaAlAs stop layer 2 in the condition leaving the SiO2 mask 16. At this time, by changing thickness of a quantum well layer 9, absorbing wavelength of a modulator can be controlled. After then, the part to act as the modulator and grown on the InGaAlAs stop layer 2 is masked according to the SiO2 film 16, etc., and the layers grown on the part (the respective layers 2-7) to act as a laser are etched selectively according to sulfuric acid. Moreover, after the SiO2 film 16 is removed, respective electrode layers 13,14,15 are evaporated, and a reflection checking film 17 is formed finally on the injection edge surface to obtain a laser beam emitting element. |
| 公开日期 | 1987-10-08 |
| 申请日期 | 1986-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79085]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | KAWAMURA YUICHI,WAKITA KOICHI,ITAYA YOSHIO,et al. Manufacture of semiconductor light emitting element. JP1987229990A. 1987-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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