半導体レーザ装置
文献类型：专利
| 作者 | 和田 優; 伊藤 国雄 |
| 发表日期 | 1999-05-21 |
| 专利号 | JP2930213B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To form a device at a low cost by causing the end face of a cavity in each laser chip to be covered with a high reflectance coating and its laser chip is installed to a supporting part of the chip through a mounting member and sealing the whole of the laser chip and mounting member with a translucent resin. CONSTITUTION:The end face of a cavity in each laser chip 3 is covered with a high reflectance coating and its laser chip 3 is disposed at a supporting part 2 of the chip through a mounting member 1A'; besides, the whole of each chip 3 and the mounting member 1A' is covered with translucent plastics 6. This disposition eliminates the need for preparing expensive component parts, such as an Au-plated stem, a cap with a window glass coated with AR and then this device is made by the use of same materials and processes as those of ordinary plastic sealing type LEDs and the like. The whole of the device is thus formed at a low cost. |
| 公开日期 | 1999-08-03 |
| 申请日期 | 1989-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79088]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 和田 優,伊藤 国雄. 半導体レーザ装置. JP2930213B2. 1999-05-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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