Semiconductor laser element
文献类型：专利
| 作者 | HONDA KAZUO; MORI YOSHIFUMI |
| 发表日期 | 1988-03-01 |
| 专利号 | JP1988048887A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To eliminate instability of mode and noises due to returning light, by forming an active layer along the advancing direction of light so that a flat part and a curved recess part are provided, and providing waveguide mechanisms having different gain waveguide type and refractive-index waveguide type, thereby controlling oscillating modes. CONSTITUTION:A stripe shaped groove part 3, which has different widths in the stripe direction, is formed on a semiconductor substrate A p-type AlGaAs clad layer 4, an AlGaAs active layer 5, an n-type AlGaAs clad layer 6 and the like are grown on the substrate Then, the active layer 5 becomes flat on the narrow groove part. The active layer 5 is formed in a curved recess shape on the wide groove part. At the flat part 12 of the active layer 5, a gain waveguide type is obtained. At the curved recess part 13 of the active layer 5, a refractive index waveguide type is obtained. Thus the different waveguide mechanism are formed along the advancing direction of light. Since the widths of the stripe are different, the distribution of carrier concentration in implantation is different depending on the directions of the stripe. Multiple modes can be provided in a longitudinal mode and a single mode is obtained in a lateral mode, because of nonuniformity in space. Owing to the implementation of the multiple modes in the longitudinal mode, noises due to returning light is decreased. |
| 公开日期 | 1988-03-01 |
| 申请日期 | 1986-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79096]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | HONDA KAZUO,MORI YOSHIFUMI. Semiconductor laser element. JP1988048887A. 1988-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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