Semiconductor luminous element
文献类型：专利
| 作者 | NISHIMURA KOUSUKE; SAKAI KAZUO |
| 发表日期 | 1991-04-16 |
| 专利号 | JP1991091270A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor luminous element |
| 英文摘要 | PURPOSE:To remove the distortion of a growth layer due to temperature change so as to improve the quality by constituting this out of a semiconductor substrate consisting of a group III-V compound semiconductor or a group IV semiconductor and a group II-VI compound semiconductor layer whose grating approximately matches this substrate and line expansion coefficient is approximately equal. CONSTITUTION:An n-side clad layer 2 consisting of n-CD0.55Zn0.45S0.95Se0.05, an active layer 3 consisting of Cd0.39Zn0.61S0.31Se0.69, and a p-side clad layer 4 consisting of p-Cd0.55Zn0.45S0.95Se0.05 are laminated in order on an n-GaAs substrate 1, and an insulating film 5 and an electrode 6, on the surface, and an electrode, on the rear, are formed. This way, by adjusting the composition ratio of Cd of the group II element of a group II-VI compound semiconductor layer, the line expansion coefficient of the group II-VI compound semiconductor layer can be made approximately equal to the line expansion coefficient of the substrate. Accordingly, high quality of crystal, which is hardly subjected to the distortion by temperature change, can be obtained, as a result a high performance of short wave length generating element can be obtained. |
| 公开日期 | 1991-04-16 |
| 申请日期 | 1989-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79105]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | NISHIMURA KOUSUKE,SAKAI KAZUO. Semiconductor luminous element. JP1991091270A. 1991-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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